The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Mar. 08, 2012
Yoshiko Kato, Kanagawa-ken, JP;
Hiroyuki Kutsukake, Kanagawa-ken, JP;
Yoshiko Kato, Kanagawa-ken, JP;
Hiroyuki Kutsukake, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device, includes: a semiconductor substrate; a first conductivity type well and a second conductivity type well; a first active area; a second active area; a first well contact layer; a plurality of first source/drain layers; a first gate insulating film; a first gate electrode; a second well contact layer; a plurality of second source/drain layers; a second gate insulating film; and a second gate electrode. The first well contact layer is formed in the first active area at one end part in the one direction. The one end parts in each of the first active areas and in each of the second active areas are mutually on the same side.