The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Aug. 15, 2013
Applicant:
Kyungpook National University Industry-academic Cooperation Foundation, Daegu, KR;
Inventors:
Jung-hee Lee, Daegu, KR;
Ki-sik Im, Daegu, KR;
Dong-seok Kim, Daegu, KR;
Hee-sung Kang, Daegu, KR;
Dong-hyeok Son, Gyeongsanguk-do, KR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/02365 (2013.01); H01L 29/7391 (2013.01); H01L 29/785 (2013.01);
Abstract
The present disclosure relates to nitride semiconductor and a fabricating method thereof, and a nitride semiconductor according to an exemplary embodiment of the present disclosure includes a nitride based first and second electrode placed with a distance on a substrate, a nitride based channel layer which connects the first and second electrode, an insulating layer which covers the channel layer, and a third electrode which is formed to cover the insulating layer on the insulating layer.