The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

May. 14, 2013
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;

Inventors:

Seohong Jung, Seoul, KR;

Sun Hee Lee, Seoul, KR;

Seung-Hwan Cho, Suwon-si, KR;

Myounggeun Cha, Seoul, KR;

Yoonho Khang, Yongin-si, KR;

Youngki Shin, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78621 (2013.01); H01L 29/7869 (2013.01);
Abstract

A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.


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