The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jul. 17, 2012
Joon-seok Park, Seongnam-si, KR;
Tae-sang Kim, Seoul, KR;
Hyun-suk Kim, Hwaseong-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Jong-baek Seon, Yongin-si, KR;
Kyoung-seok Son, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Seok-jun Seo, Suncheon-si, KR;
Joon-seok Park, Seongnam-si, KR;
Tae-sang Kim, Seoul, KR;
Hyun-suk Kim, Hwaseong-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Jong-baek Seon, Yongin-si, KR;
Kyoung-seok Son, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Seok-jun Seo, Suncheon-si, KR;
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Abstract
A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.