The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jan. 16, 2013
Applicant:
Hewlett-packard Development Company, L.p., Houston, TX (US);
Inventors:
Xia Sheng, Palo Alto, CA (US);
Zhang-Lin Zhou, Palo Alto, CA (US);
Richard H. Henze, San Carlos, CA (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); B82Y 10/00 (2013.01); Y10S 977/83 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/146 (2013.01);
Abstract
A memristor structure has two electrodes sandwiching an insulating region, and includes a nanoparticle providing a conducting path between the two electrodes, wherein either the insulating region comprises an inorganic material and nanoparticle comprises a solid nanoparticle or a core/shell nanoparticle or the insulating region comprises an inorganic or organic material and the nanoparticle comprises a core/shell nanoparticle.