The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Jan. 04, 2011
Applicants:

Ian A. Maxwell, Five Dock, AU;

Thorsten Trupke, Coogee, AU;

Robert A. Bardos, Surry Hills, AU;

Kenneth E. Arnett, Boulder, CO (US);

Inventors:

Ian A. Maxwell, Five Dock, AU;

Thorsten Trupke, Coogee, AU;

Robert A. Bardos, Surry Hills, AU;

Kenneth E. Arnett, Boulder, CO (US);

Assignee:

BT IMAGING PTY LTD, Redfern, AU;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01);
Abstract

Methods and systems are presented for acquiring photoluminescence images () of silicon solar cells and wafers () as they progress along a manufacturing line (). In preferred embodiments the images are acquired while maintaining motion of the samples. In certain embodiments photoluminescence is generated with short pulse, high intensity excitation, () for instance by a flash lamp () while in other embodiments images are acquired in line scanning fashion. The photoluminescence images can be analysed to obtain information on average or spatially resolved values of one or more sample properties such as minority carrier diffusion length, minority carrier lifetime, dislocation defects, impurities and shunts, or information on the incidence or growth of cracks in a sample.


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