The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Jun. 20, 2013
Applicants:

Jochen Reinmuth, Reutlingen, DE;

Jens Frey, Filderstadt, DE;

Yvonne Bergmann, Reutlingen, DE;

Inventors:

Jochen Reinmuth, Reutlingen, DE;

Jens Frey, Filderstadt, DE;

Yvonne Bergmann, Reutlingen, DE;

Assignee:

ROBERT BOSCH GMBH, Stuttgart, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/762 (2006.01); H01L 23/48 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 23/481 (2013.01); H01L 24/02 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83805 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/94 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/29117 (2013.01); B81B 7/007 (2013.01); B81C 1/00095 (2013.01); B81B 2207/096 (2013.01); H01L 2924/1461 (2013.01);
Abstract

A method for manufacturing a component having an electrical through-connection is described. The method includes the following steps: providing a semiconductor substrate having a front side and a back side opposite from the front side, producing an insulating trench, which annularly surrounds a contact area, on the front side of the semiconductor substrate, filling the insulating trench with an insulating material, producing an electrical contact structure on the front side of the semiconductor substrate by depositing an electrically conductive material in the contact area, removing the semiconductor material remaining in the contact area on the back side of the semiconductor substrate in order to produce a contact hole which opens up the bottom side of the contact structure, and depositing a metallic material in the contact hole in order to electrically connect the electrical contact structure to the back side of the semiconductor substrate.


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