The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Jul. 14, 2010
Applicants:

Stuart B. Molin, Carlsbad, CA (US);

Paul A. Nygaard, Carlsbad, CA (US);

Michael A. Stuber, Carlsbad, CA (US);

Inventors:

Stuart B. Molin, Carlsbad, CA (US);

Paul A. Nygaard, Carlsbad, CA (US);

Michael A. Stuber, Carlsbad, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/70 (2006.01); H01L 27/12 (2006.01); H01L 21/78 (2006.01); H01L 21/84 (2006.01); H01L 23/36 (2006.01); H01L 23/367 (2006.01); H01L 29/786 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/76256 (2013.01); H01L 21/78 (2013.01); H01L 21/84 (2013.01); H01L 23/36 (2013.01); H01L 23/3677 (2013.01); H01L 27/1203 (2013.01); H01L 29/78603 (2013.01); H01L 29/78606 (2013.01); H01L 2924/3011 (2013.01); H01L 2224/03002 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/94 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68377 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/131 (2013.01); H01L 2224/94 (2013.01); H01L 2224/11002 (2013.01); H01L 2924/1305 (2013.01);
Abstract

Embodiments of the present invention provide for the provisioning of efficient support to semiconductor-on-insulator (SOI) structures. Embodiments of the present invention may additionally provide for SOI structures with improved heat dissipation performance while preserving the beneficial electrical device characteristics that accompany SOI architectures. In one embodiment, an integrated circuit is disclosed. The integrated circuit comprises a silicon-on-insulator die from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The support region and the strengthening layer are configured to act in combination to provide a majority of a required stabilizing force to the silicon-on-insulator die when it is singulated from the silicon-on-insulator wafer.


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