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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9034668 B1

PDFFull Text
Expired
Date of Patent:
May. 19, 2015

Filed:

Jul. 13, 2011

Device and method for forming on a nanowire made of a semiconductor an alloy of this semiconductor with a metal or a metalloid

Applicants:

Massimo Mongillo, Grenoble, FR;

Silvano DE Franceschi, Fontaine, FR;

Panayotis Spathis, Grenoble, FR;

Inventors:

Massimo Mongillo, Grenoble, FR;

Silvano De Franceschi, Fontaine, FR;

Panayotis Spathis, Grenoble, FR;

Assignee:

COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris, FR;

Attorneys:

Hultquist, PLLC

Mary B. Grant

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3205 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); B22F 1/02 (2006.01); H01L 29/41 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/32053 (2013.01); B82Y 10/00 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/0843 (2013.01); H01L 29/45 (2013.01); H01L 29/66439 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); B22F 1/025 (2013.01); B22F 2999/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/762 (2013.01); H01L 29/413 (2013.01);
Abstract

Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors.

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Mongillo, Massimo. (2015). Device and method for forming on a nanowire made of a semiconductor an alloy of this semiconductor with a metal or a metalloid (U.S. Patent No. 9034668). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9034668

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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