The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Nov. 11, 2010
Applicants:
Vernon Yost, Lakewood, CO (US);
Hao-chih Yuan, Golden, CO (US);
Matthew Page, Golden, CO (US);
Inventors:
Assignee:
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/02 (2006.01); H01B 1/22 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 31/18 (2006.01); H01B 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01B 1/00 (2013.01); H01L 21/67086 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract
A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.