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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9034200 B1

PDFFull Text
Date of Patent:
May. 19, 2015

Filed:

Jan. 22, 2008

Plasma etching of diamond surfaces

Applicants:

Chee-leong Lee, Berkshire, GB;

Erdan Gu, Berkshire, GB;

Geoffrey Alan Scarsbrook, Berkshire, GB;

Ian Friel, Berkshire, GB;

Martin David Dawson, Berkshire, GB;

Inventors:

Chee-Leong Lee, Berkshire, GB;

Erdan Gu, Berkshire, GB;

Geoffrey Alan Scarsbrook, Berkshire, GB;

Ian Friel, Berkshire, GB;

Martin David Dawson, Berkshire, GB;

Assignee:

Element Six Limited Technologies Limited, , GB;

Attorney:

Bryan Cave LLP

Primary Examiner:

Binh X Tran

Assistant Examiner:

Thomas Pham

Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 25/68 (2006.01); C03C 15/00 (2006.01); C23F 1/00 (2006.01); C23F 3/00 (2006.01); H01L 29/16 (2006.01); C23C 16/27 (2006.01); C30B 25/10 (2006.01); C30B 25/20 (2006.01); C30B 29/04 (2006.01); G01N 27/30 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/167 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1602 (2013.01); C23C 16/27 (2013.01); C23C 16/274 (2013.01); C23C 16/278 (2013.01); C30B 25/105 (2013.01); C30B 25/20 (2013.01); C30B 29/04 (2013.01); G01N 27/308 (2013.01); H01L 21/02376 (2013.01); H01L 21/02527 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/02634 (2013.01); H01L 21/041 (2013.01); H01L 29/045 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 21/02104 (2013.01);
Abstract

The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rof the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rof the plasma etched surface is less than 1.5 times the roughness of Rof the original surface, or Rof the plasma etched surface is less than 1 nm.

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