The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Jul. 17, 2008
Applicants:

Shoichi Doi, Shiga, JP;

Tatsuya Nishiwaki, Shiga, JP;

Inventors:

Shoichi Doi, Shiga, JP;

Tatsuya Nishiwaki, Shiga, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/32 (2006.01); C25B 9/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01); C23C 14/34 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01); C23C 14/04 (2006.01); C23C 14/46 (2006.01); G02F 1/1337 (2006.01); C23C 14/22 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3442 (2013.01); C23C 14/221 (2013.01); C23C 14/0605 (2013.01); H01J 37/3411 (2013.01); H01J 2237/3146 (2013.01); H01J 37/3426 (2013.01); C23C 14/042 (2013.01); C23C 14/225 (2013.01); C23C 14/46 (2013.01); G02F 1/133734 (2013.01);
Abstract

An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate. The apparatus includes a mask disposed in such a way as to cover a part of the top surface of the substrate on an upstream side of a position where the sputtering film is formed, and a temperature regulator which regulates the temperature of the target.


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