The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Dec. 21, 2011
Applicants:
Sin-hyun Jin, Gyeonggi-do, KR;
Sang-jin Byeon, Gyeonggi-do, KR;
Inventors:
Sin-Hyun Jin, Gyeonggi-do, KR;
Sang-Jin Byeon, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/02 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); G11C 7/08 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01); G11C 5/147 (2013.01);
Abstract
A semiconductor memory device includes a bit line sense amplification unit configured to sense/amplify data loaded on a bit line, and a driving control unit configured to supply a power line of the bit line sense amplification unit with an overdriving voltage in an overdriving period and supply an internal voltage line with a voltage of the power line of the bit line sense amplification unit in a discharge driving period.
Jin, Sin-Hyun. (2015). Semiconductor device, semiconductor memory device and operation method thereof (U.S. Patent No. 9030900). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9030900
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