The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Dec. 01, 2011
Applicants:

Franck Sarrus, Saint Laurent de Mure, FR;

Thierry Rambaud, Genas, FR;

Dominique Tournier, Lyons, FR;

Philippe Godignon, Valldoreix, ES;

Jean-françois DE Palma, Arlington, MA (US);

Inventors:

Franck Sarrus, Saint Laurent de Mure, FR;

Thierry Rambaud, Genas, FR;

Dominique Tournier, Lyons, FR;

Philippe Godignon, Valldoreix, ES;

Jean-François De Palma, Arlington, MA (US);

Assignee:

MERSEN France SB SAS, Saint-Bonnet-de-Mure, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/08 (2006.01); H02H 9/02 (2006.01); H01L 31/02 (2006.01); H02H 7/20 (2006.01);
U.S. Cl.
CPC ...
H02H 9/025 (2013.01); H01L 31/02021 (2013.01); H02H 7/20 (2013.01); Y02E 10/50 (2013.01);
Abstract

A system for supplying direct current and DC voltage is provided. The system comprise a first supply branch having a first DC voltage source and a power field-effect transistor of a current limiter which are connected in series, and a second supply branch having a second DC voltage source. The power transistor has a current/voltage characteristic with a first inverse polarization area without current limitation, and a second conduction area with current limitation based on a current threshold. The power field-effect transistor is connected to the first voltage source with an inverse polarization when the voltage source of the first branch is operating normally.


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