The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Apr. 20, 2012
Martin Krajci, Palatine, IL (US);
Martin Krajci, Palatine, IL (US);
Continental Automotive Systems, Inc., Auburn Hills, MI (US);
Abstract
A semiconductor device may be protected from over-voltages via a comparator-controlled, high-current FET coupled to the semiconductor device output and between circuit devices that carry high voltages. A three-terminal, N-channel field effect transistor (FET) may have its source coupled to the output of the semiconductor device to be protected from over voltage. The FET drain may be connected to the load to be driven by the semiconductor device. A transistor, or other voltage comparator, may be configured and connected in order to compare the voltage on the FET drain to a Vreference voltage. When a voltage on the FET drain exceeds V, the comparator output may shut down the FET, thereby isolating the semiconductor device, which is connected to the FET source, from the overvoltage on the FET drain.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile