The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Nov. 29, 2011
Atsuhito Murai, Osaka, JP;
Yukinobu Nakata, Osaka, JP;
Shingo Kawashima, Osaka, JP;
Jun Nishimura, Osaka, JP;
Atsuhito Murai, Osaka, JP;
Yukinobu Nakata, Osaka, JP;
Shingo Kawashima, Osaka, JP;
Jun Nishimura, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device (A) according to the present invention includes: a thin-film transistor (); a first insulating layer () which has been formed over the thin-film transistor (); a second insulating layer () which has been formed on the first insulating layer () and which has a hole (); and an opaque layer () which is arranged so as to overlap an oxide semiconductor layer () when viewed along a normal to the substrate (). The opaque layer () has been formed in the hole (). The opaque layer () has a raised and curved upper surface and the upper surface of the second insulating layer () is located closer to the substrate () than the upper surface of the opaque layer () is.