The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Feb. 08, 2011
Applicants:

Shigetoshi Sugawa, Sendai, JP;

Hideki Tominaga, Kyoto, JP;

Kenji Takubo, Kyoto, JP;

Yasushi Kondo, Kyoto, JP;

Inventors:

Shigetoshi Sugawa, Sendai, JP;

Hideki Tominaga, Kyoto, JP;

Kenji Takubo, Kyoto, JP;

Yasushi Kondo, Kyoto, JP;

Assignees:

Shimadzu Corporation, Kyoto-Shi, JP;

Tohoku University, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H04N 5/357 (2011.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H04N 5/357 (2013.01); H04N 5/3575 (2013.01); H04N 5/37452 (2013.01); H04N 5/378 (2013.01); H04N 5/3745 (2013.01);
Abstract

A transistor () which acts as a load-current source for a source follower amplifying transistor () for outputting a pixel signal to a pixel output line () is provided in each picture element (), whereby a high bias current is prevented from passing through the high-resistance pixel output line (), so that a variation in an offset voltage among picture elements is suppressed. Inclusion of the high-resistance pixel output line () into the source follower amplification circuit is also avoided, whereby the gain characteristics are prevented from deterioration. Thus, the S/N ratio of the picture element is improved so as to enhance the quality of the images.


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