The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jan. 14, 2014
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Makoto Wada, Yokohama, JP;
Akihiro Kajita, Yokkaichi, JP;
Atsunobu Isobayashi, Yokkaichi, JP;
Tatsuro Saito, Yokkaichi, JP;
Tadashi Sakai, Yokohama, JP;
Taishi Ishikura, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate provided with a lower interconnect layer formed thereon, and having a device region and a mark formation region, a CNT via structure formed in the device region such that it contacts the lower interconnect layer, a first mark formed in the mark formation region, formed by embedding carbon nanotubes, and formed in the same layer as the CNT via structure, a second mark formed in the mark formation region of the semiconductor substrate, formed with no carbon nanotubes, and formed in the same layer as the CNT via structure and the first mark, and an interconnect layer formed on the CNT via structure and the first and second marks, and electrically connected to the CNT via structure.