The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
May. 24, 2012
Applicants:
GA Young Ha, Icheon-si, KR;
Ki Seon Park, Seoul, KR;
Inventors:
Ga Young Ha, Icheon-si, KR;
Ki Seon Park, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01F 41/30 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01F 41/307 (2013.01); B82Y 40/00 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming plural layers of a MTJ device, depositing a conductive layer over the plural layers, forming a hard mask pattern used for patterning the plural layers over the conductive layer, where the conductive layer is exposed through the hard mask pattern, performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer, and patterning the plural layers by using the hard mask pattern as an etch mask to form the MTJ device.