The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Sep. 25, 2013
International Business Machines Corporation, Armonk, NY (US);
Jeffrey P. Gambino, Westford, VT (US);
Qizhi Liu, Lexington, MA (US);
Zhenzhen Ye, South Burlington, VT (US);
Yan Zhang, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed are semiconductor-on-insulator (SOI) structures comprising an SOI device (e.g., an SOI metal oxide semiconductor field effect transistor (MOSFET)) with local heat dissipater(s). Each heat dissipater comprises an opening, which is adjacent an active region of the SOI device, which extends through the insulator layer on which the SOI device sits to the semiconductor substrate below, and which is at least partially filled with a fill material. This fill material is a thermal conductor so as to dissipate heat generated by the SOI device and is also an electrical isolator so as to minimize current leakage. In the case of MOSFET, the local heat dissipater(s) can be aligned below the source/drain extension(s) or the source/drain(s). Alternatively, the local heat dissipater(s) can be aligned below the channel or parallel and adjacent to opposing sides of the channel. Also disclosed herein are methods of forming these SOI structures.