The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Sep. 05, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shinichi Sotome, Mie-ken, JP;

Kenta Yamada, Mie-ken, JP;

Wataru Sakamoto, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42344 (2013.01); H01L 29/401 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 27/11524 (2013.01); H01L 27/1157 (2013.01);
Abstract

According to an embodiment, a non-volatile memory device includes a memory cell including a semiconductor layer, a charge storage layer provided on the semiconductor layer, and a first insulating film provided between the semiconductor layer and the charge storage layer. The device also includes a first conductive layer provided on the charge storage layer, a second conductive layer provided between the charge storage layer and the first conductive layer, a second insulating film provided between the charge storage layer and the second conductive layer, and a third insulating film provided between the first conductive layer and the second conductive layer.


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