The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Mar. 26, 2012
Applicants:

Jong Ho NA, Seoul, KR;

SE Hwan Sim, Seoul, KR;

Chong Cook Kim, Seoul, KR;

Jae IN Yoon, Seoul, KR;

Jong Pil Jeong, Seoul, KR;

Jung Hyun Hwang, Seoul, KR;

Dong Han Yoo, Seoul, KR;

Inventors:

Jong Ho Na, Seoul, KR;

Se Hwan Sim, Seoul, KR;

Chong Cook Kim, Seoul, KR;

Jae In Yoon, Seoul, KR;

Jong Pil Jeong, Seoul, KR;

Jung Hyun Hwang, Seoul, KR;

Dong Han Yoo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/167 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 2924/0002 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01);
Abstract

Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.


Find Patent Forward Citations

Loading…