The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Nov. 21, 2012
Applicants:

Akitaka Soeno, Toyota, JP;

Toshimasa Yamamoto, Ichinomiya, JP;

Inventors:

Akitaka Soeno, Toyota, JP;

Toshimasa Yamamoto, Ichinomiya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/4236 (2013.01); H01L 29/1095 (2013.01); H01L 29/0878 (2013.01);
Abstract

A semiconductor device includes a first semiconductor layer surrounding a bottom of the trench gate, a second semiconductor layer disposed along one of end portions of the trench gate in a longitudinal direction of the trench gate, one of end portions of the second semiconductor layer contacting the body layer and the other of the end portions of the second semiconductor layer contacting the first semiconductor layer, and a connecting layer, one of end portions of the connecting layer being connected to the body layer and the other of the end portions of the connecting layer being connected to the first semiconductor layer, the connecting layer contacting the second semiconductor layer, and the connecting layer being separated from the one of the end portions of the trench gate in the longitudinal direction of the trench gate by the second semiconductor layer.


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