The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
May. 20, 2011
Tetsuo Kikuchi, Osaka, JP;
Yoshiharu Kataoka, Osaka, JP;
Shinya Tanaka, Osaka, JP;
Junya Shimada, Osaka, JP;
Chikao Yamasaki, Osaka, JP;
Tetsuo Kikuchi, Osaka, JP;
Yoshiharu Kataoka, Osaka, JP;
Shinya Tanaka, Osaka, JP;
Junya Shimada, Osaka, JP;
Chikao Yamasaki, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Thin film transistors having a high current drive capability and a suitable threshold voltage are provided. The thin film transistor includes a gate electrode, an insulating layer formed on the gate electrode, a semiconductor layer formed on the insulating layer, and source/drain electrodes formed on the semiconductor layer. The semiconductor layer includes a plurality of regions separated from each other in a longitudinal direction of the source/drain electrodes.