The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Oct. 24, 2012
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventors:
Jun Kawahara, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/00 (2006.01); C08G 77/60 (2006.01); C08G 77/62 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0094 (2013.01); H01L 51/004 (2013.01); H01L 51/0079 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01); C08G 77/60 (2013.01); C08G 77/62 (2013.01);
Abstract
A semiconductor device containing a novel cyclosiloxane polymer showing electroconductivity or semiconductivity has a charge transport layer comprising a plasma polymer containing structural units (A) each having a transition metal as a central metal and structural units (B) each situated between structural units (A) adjacent to each other and having a cyclosiloxane skeleton. The charge transport layer is formed by plasma polymerization of an organic metal compound having the transition metal as the central metal and the cyclosiloxane compound in a reactor.