The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Aug. 12, 2013
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Koji Okuno, Kiyosu, JP;
Atsushi Miyazaki, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
Abstract
The invention provides a Group III nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first ESD layer, a second ESD layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode N, a p-type electrode P, and a passivation film F. The second ESD layer has pits X having a mean pit diameter D. The mean pit diameter D is 500 Å to 3,000 Å. An InGaN layer included in the n-side superlattice layer has a thickness Y satisfying the following condition: −0.029×D+82.8≦Y≦−0.029×D+102.8.