The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
May. 07, 2012
Mathieu Xavier Sénès, Oxford, GB;
Valerie Berryman-bousquet, Chipping Norton, GB;
Mathieu Xavier Sénès, Oxford, GB;
Valerie Berryman-Bousquet, Chipping Norton, GB;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminum, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly.
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