The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jun. 28, 2011
Abdessattar Bouzid, Seoul, KR;
Sung Wook Moon, Gyeonggi-do, KR;
Dong Hoon Yi, Gyeonggi-do, KR;
SE Min Kim, Seoul, KR;
Abdessattar Bouzid, Seoul, KR;
Sung Wook Moon, Gyeonggi-do, KR;
Dong Hoon Yi, Gyeonggi-do, KR;
Se Min Kim, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
The present invention relates to a single photon detector (SPD) at telecom wavelength of 1.55 μm based on InGaAs/InP avalanche photodiode (APD). In order to operate the SPD at a low after-pulse noise, a DC bias voltage lower than the breakdown voltage is applied to an InGaAs/InP APD. A bipolar rectangular gating signal is superimposed with the DC bias voltage and applied to the APD so as to exceed the breakdown voltage during the gate-on time of each period of the gate signal. The use of the bipolar rectangular gating signal enabling us to operate the APD well below the breakdown voltage during the gate-off time, thereby make the release of the trapped charge carriers faster and then reduces the after-pulse noise. As a result, it permits to increase the repetition rate of the SPD.