The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Mar. 04, 2011
Applicants:

Naoko Unagami, Yokohama, JP;

Makoto Monoi, Tokyo, JP;

Nagataka Tanaka, Yokohama, JP;

Inventors:

Naoko Unagami, Yokohama, JP;

Makoto Monoi, Tokyo, JP;

Nagataka Tanaka, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H04N 5/355 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/148 (2013.01); H01L 27/14627 (2013.01); H04N 5/355 (2013.01);
Abstract

According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.


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