The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Sep. 20, 2013
Applicant:
Stmicroelectronics Crolles 2 Sas, Crolles, FR;
Inventors:
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/02266 (2013.01); H01L 29/66477 (2013.01); H01L 21/02697 (2013.01); H01L 21/28088 (2013.01);
Abstract
A method for forming an aluminum titanium nitride layer on a wafer by plasma-enhanced physical vapor deposition including a first step at a radio frequency power ranging between 100 and 500 W only, and a second step at a radio frequency power ranging between 500 and 1,000 W superimposed to a D.C. power ranging between 500 and 1,000 W. An insulated gate comprising such an aluminum titanium nitride layer.