The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9029209 B1

PDF
Full Text
Expired
Date of Patent:
May. 12, 2015

Filed:

Oct. 11, 2011
Applicant:

Mitsunobu Miyamoto, Osaka, JP;

Inventor:

Mitsunobu Miyamoto, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 29/78606 (2013.01); H01L 29/78693 (2013.01); H01L 29/7869 (2013.01); H01L 29/66969 (2013.01);
Abstract

A method of manufacturing a thin film transistor substrate () includes at least the steps of: forming a gate electrode () on an insulating substrate () by using a first photomask; forming a channel protective film () on an oxide semiconductor layer () so as to cover a channel region (C) by using a second photomask; forming a source electrode () on the oxide semiconductor layer () by using a third photomask; and forming a planarizing film () on an interlayer insulating film () by using a fourth photomask.


Find Patent Forward Citations

Miyamoto, Mitsunobu. (2015). Method of manufacturing a thin film transistor substrate and thin film transistor substrate manufactured by the same (U.S. Patent No. 9029209). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9029209

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