The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jun. 28, 2012
Fang Liu, Woburn, MA (US);
Kuang L. Yang, Newton, MA (US);
Fang Liu, Woburn, MA (US);
Kuang L. Yang, Newton, MA (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A method for producing a MEMS device having improved charge elimination characteristics includes providing a substrate having one or more layers, and applying a first charge elimination layer onto at least one portion of one given layer of the substrate. The method may then (1) apply a sacrificial layer onto the first charge elimination layer, (2) apply a second charge elimination layer onto at least a portion of the sacrificial layer, and (3) deposit a movable layer onto at least a portion of the second charge elimination layer. To form a structure within the movable layer the method may etch the movable layer. The method may then etch the sacrificial layer to release the structure.