The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Sep. 18, 2009
Applicants:

Masakatsu Ikisawa, Ibaraki, JP;

Masataka Yahagi, Ibaraki, JP;

Inventors:

Masakatsu Ikisawa, Ibaraki, JP;

Masataka Yahagi, Ibaraki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/00 (2006.01); H01B 1/02 (2006.01); H01B 1/12 (2006.01); C22C 28/00 (2006.01); C01B 13/14 (2006.01); C01B 13/00 (2006.01); C01F 11/02 (2006.01); C01F 7/00 (2006.01); C01G 45/12 (2006.01); C01G 53/04 (2006.01); C01G 17/02 (2006.01); C01G 19/02 (2006.01); C23C 14/34 (2006.01); C04B 35/01 (2006.01); C04B 35/457 (2006.01); C04B 35/626 (2006.01); C23C 14/08 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); C04B 35/01 (2013.01); C04B 35/457 (2013.01); C04B 35/6263 (2013.01); C04B 35/62635 (2013.01); C04B 35/62695 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3287 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/604 (2013.01); C04B 2235/6562 (2013.01); C23C 14/086 (2013.01);
Abstract

The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.


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