The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jun. 30, 2011
Applicants:
Robert T. Bondokov, Watervliet, NY (US);
Shailaja P. Rao, Albany, NY (US);
Shawn Robert Gibb, Clifton Park, NY (US);
Leo J. Schowalter, Latham, NY (US);
Inventors:
Robert T. Bondokov, Watervliet, NY (US);
Shailaja P. Rao, Albany, NY (US);
Shawn Robert Gibb, Clifton Park, NY (US);
Leo J. Schowalter, Latham, NY (US);
Assignee:
Crystal IS, Inc., Green Island, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 23/002 (2013.01); C30B 29/403 (2013.01);
Abstract
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.