The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Aug. 02, 2012
Applicants:

Jin Hyung Lim, Gyunggi-do, KR;

Seok Kyoon Woo, Gyunggi-do, KR;

Chung Eun Lee, Gyunggi-do, KR;

Doo Young Kim, Gyunggi-do, KR;

Inventors:

Jin Hyung Lim, Gyunggi-do, KR;

Seok Kyoon Woo, Gyunggi-do, KR;

Chung Eun Lee, Gyunggi-do, KR;

Doo Young Kim, Gyunggi-do, KR;

Assignee:

Samsung Electro-Mechanics Co., Ltd., Suwon, Gyunggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/30 (2006.01); H01G 4/228 (2006.01); H01G 4/008 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
H01G 4/30 (2013.01); H01G 4/0085 (2013.01); H01G 4/012 (2013.01); H01G 4/12 (2013.01); Y10T 29/435 (2015.01);
Abstract

There is provided a multilayer ceramic electronic component, including: a ceramic body including dielectric layers; and first and second inner electrodes disposed to face each other with the dielectric layer interposed therebetween within the ceramic body, the first and second inner electrodes being alternately laminated with a difference in printing widths therebetween, wherein a difference ratio between the printing widths of the first and second inner electrodes is 20 to 80%. According to embodiments of the present invention, a multilayer ceramic electronic component having excellent reliability and withstand voltage characteristics may be realized, by reducing the occurrence of cracking through a reduction in the influence of step height while securing high capacitance.


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