The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Jan. 05, 2012
Applicants:

John M. Jorgensen, Los Gatos, CA (US);

Sam Kang, Pleasanton, CA (US);

Chad N. Marak, Cedar Park, TX (US);

James LU, Hsinchu, TW;

Inventors:

John M. Jorgensen, Los Gatos, CA (US);

Sam Kang, Pleasanton, CA (US);

Chad N. Marak, Cedar Park, TX (US);

James Lu, Hsinchu, TW;

Assignee:

Littelfuse, Inc., Chicago, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/22 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01);
Abstract

A transient voltage suppressor may include a silicon controlled rectifier (SCR) having an anode coupled to Vcc. The SCR may include a PNP transistor (Q) and an NPN transistor (Q), the PNP transistor having a base in common with a collector of the NPN transistor and the PNP transistor having a collector in common with a base of the NPN transistor. The TVS may further include a Zener diode having an anode and cathode, wherein the anode is directly coupled to the base of the NPN transistor and/or the cathode is directly coupled to the base of the PNP transistor, and an additional NPN transistor (Q). The cathode of the SCR may be directly coupled to a base of the additional NPN transistor, and a collector and emitter of the additional NPN transistor may be directly coupled in series between Vand ground.


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