The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Jun. 14, 2013
Rohm Co., Ltd., Kyoto, JP;
Yasuhiro Miyagoe, Kyoto, JP;
Rohm Co., Ltd., , JP;
Abstract
A semiconductor integrated circuit device has a p-type substrate to which a ground voltage is applied and a floating-type NMOSFET which is integrated on the p-type substrate and to which a negative voltage lower than the ground voltage is applied. The floating-type NMOSFET includes an n-type buried layer buried in the p-type substrate, a high voltage n-type well formed on the n-type buried layer and floats electrically, a p-type drift region formed in the n-type well, an n-type drain region and an-type source region formed in the p-type drift region, and a gate electrode formed on a channel region interposed between the n-type drain region and the n-type source region. The high voltage n-type well includes an n-type tunnel region, with a higher impurity concentration than that of the high voltage n-type well, inside a peripheral region formed so as to surround the p-type drift region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile