The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Nov. 06, 2012
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventors:

Yinhung Chen, Shenzhen, CN;

Xia Tian, Shenzhen, CN;

Pei Jia, Shenzhen, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/136213 (2013.01); G09G 3/3648 (2013.01); G09G 2300/0876 (2013.01); G09G 2320/0223 (2013.01);
Abstract

The present invention provides a drive circuit of liquid crystal panel, which includes a gate driver, a source driver, a plurality of gate lines, and a plurality of data lines. The plurality of gate lines and data lines define a plurality of pixel units. Each of the pixel units includes a thin-film transistor, a common electrode, a pixel electrode electrically connected to the thin-film transistor, and a correction capacitor. The thin-film transistor is electrically connected to the gate driver and the source driver respectively by means of the gate lines and the data lines. The common electrode and the pixel electrode constitute a liquid crystal capacitor. The thin-film transistor includes a gate terminal and a drain terminal. The correction capacitor is electrically connected between the gate terminal and the drain terminal for correcting a parasitic capacitor generated between the gate terminal ad the drain terminal due to structural characteristics.


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