The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Feb. 27, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jung Chak Ahn, Yongin-si, KR;
Hisanori Ihara, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/146 (2006.01); H01L 21/00 (2006.01); H04N 5/374 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/374 (2013.01); H04N 5/37457 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14614 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14641 (2013.01);
Abstract
A unit pixel of an image sensor is provided. The unit pixel includes a photoelectric conversion element configured to generate photocharge varying with the intensity of incident light, a transfer transistor configured to transfer the photocharge to a floating diffusion in response to a transfer control signal, and a supplemental transistor connected to the floating diffusion. Because the unit pixel includes only one transistor in addition to the transfer transistor, the area of the unit pixel is minimized, and, as a result, the resolution of a pixel array is increased and the power consumption of the pixel array is decreased.