The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Feb. 12, 2014
Applicant:

Fuji Xerox Co., Ltd., Minato-ku, Tokyo, JP;

Inventor:

Seiji Ohno, Ebina, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B41J 2/39 (2006.01); H01L 33/00 (2010.01); G03G 15/04 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); G03G 15/04054 (2013.01); H01L 27/153 (2013.01);
Abstract

A light-emitting component includes: plural light-emitting thyristors, each including a semiconductor layer stack laminating first to fourth semiconductor layers in order, and emitting light at a predetermined wavelength in an ON state; plural transfer thyristors, each including the semiconductor layer stack, the plural transfer thyristors shifting to the ON state for transferring the ON state to set corresponding light-emitting thyristors in a light-enabled state; and plural coupling transistors, each including the first to third semiconductor layers in the semiconductor layer stack and provided to couple former and latter transfer thyristors, the first and second semiconductor layers of each coupling transistor being continued to the first and second semiconductor layers of the former transfer thyristor, and the third semiconductor layer of each coupling transistor being continued to the third semiconductor layer of the former transfer thyristor with a thickness to be depleted in a state where no voltage is applied.


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