The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Oct. 22, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/4763 (2006.01); H01L 51/52 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 51/05 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/52 (2013.01); H01L 27/1292 (2013.01); H01L 27/3248 (2013.01); H01L 51/0512 (2013.01); H01L 51/56 (2013.01); H01L 51/0558 (2013.01); H01L 27/3274 (2013.01);
Abstract
A thin film transistor element includes: a gate electrode; a source electrode and a drain electrode; an insulating layer; partition walls; and an organic semiconductor layer. The partition walls define a first aperture. Within the first aperture, at least a part of the source electrode and at least a part of the drain electrode are in contact with the semiconductor layer. The partition walls have side face portions facing the first aperture, and some of the side face portions have gentler slopes than the rest of the side face portions.