The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Mar. 17, 2013
Applicant:

Stanley Electric Co., Ltd., Tokyo, JP;

Inventors:

Mamoru Miyachi, Okegawa, JP;

Tatsuma Saito, Yokohama, JP;

Takako Chinone, Tokyo, JP;

Takanobu Akagi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 23/482 (2006.01); H01L 23/00 (2006.01); F21S 8/10 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/0095 (2013.01); H01L 2224/29164 (2013.01); H01L 23/4824 (2013.01); H01L 24/24 (2013.01); H01L 24/29 (2013.01); H01L 24/82 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/83001 (2013.01); H01L 2224/92244 (2013.01); H01L 2924/10156 (2013.01); H01L 2224/29155 (2013.01); H01L 2924/01322 (2013.01); F21S 48/115 (2013.01); F21S 48/215 (2013.01); H01L 2924/12041 (2013.01);
Abstract

A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located between the semiconductor lamination and the support substrate, containing a first jointing layer located on the semiconductor lamination side and a second jointing layer located on the support substrate side. In the plan view, the semiconductor lamination has corner portions and side portions along the periphery, the first jointing layer is encompassed by the second jointing layer, the second jointing layer is encompassed by the semiconductor lamination, and an annular region defined between outlines of the semiconductor lamination and of the first jointing layer has first portions corresponding to the corner portions of the semiconductor lamination and second portions corresponding to the side portions of the semiconductor lamination, widths of the first portions being narrower than widths of the second portions.


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