The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Jan. 22, 2013
Ngk Insulators, Ltd., Nagoya, JP;
Makoto Miyoshi, Inazawa, JP;
Tomohiko Sugiyama, Nagoya, JP;
Mikiya Ichimura, Ichinomiya, JP;
Mitsuhiro Tanaka, Tsukuba, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial substrate for use in a semiconductor element, in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface of the base substrate, includes: a channel layer made of a first group-III nitride having a composition of InAlGaN (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of InAlN (x2+y2=1, x2>0, y2>0); an anti-diffusion layer made of AlN and having a thickness of 3 nm or more; and a cap layer made of a third group-III nitride having a composition of InAlGaN (x3+y3+z3=1, z3>0).