The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Aug. 16, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 51/10 (2006.01); H01L 29/66 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1214 (2013.01); H01L 27/3262 (2013.01); H01L 27/3274 (2013.01); H01L 51/0545 (2013.01); H01L 51/105 (2013.01); H01L 27/1225 (2013.01); H01L 27/1292 (2013.01); H01L 29/66765 (2013.01); H01L 27/3248 (2013.01);
Abstract
A thin film transistor element is formed in each of adjacent first and second apertures defined by partition walls. In plan view of a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the second aperture, and in plan view of a bottom portion of the second aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the first aperture.