The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Apr. 09, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Han Kyu Seong, Seoul, KR;

Hun Jae Chung, Gyunggi-do, KR;

Jung Ja Yang, Gyunggi-do, KR;

Cheol Soo Sone, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 27/15 (2006.01); H01L 33/16 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 27/156 (2013.01); H01L 33/08 (2013.01); H01L 33/16 (2013.01); H01L 33/24 (2013.01); Y10S 977/816 (2013.01);
Abstract

There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.


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