The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Nov. 27, 2013
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Takasumi Oyanagi, Tokyo, JP;

Norikatsu Takaura, Tokyo, JP;

Mitsuharu Tai, Tokyo, JP;

Masaharu Kinoshita, Tokyo, JP;

Takahiro Morikawa, Tokyo, JP;

Kenichi Akita, Tokyo, JP;

Masahito Kitamura, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/065 (2013.01);
Abstract

A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of SbTeand GeTe. The phase change memory layer having the superlattice structure includes a SbTelayer containing Zr in contact with the first electrode.


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