The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Mar. 13, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Il-Young Yoon, Hwaseong-si, KR;
Chang-Sun Hwang, Suwon-si, KR;
Bo-Kyeong Kang, Seoul, KR;
Jae-Seok Kim, Seoul, KR;
Ho-Young Kim, Seongnam-si, KR;
Bo-Un Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, unknown;
Abstract
A method for fabricating a semiconductor device includes forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin, removing a portion of the upper pre-isolation layer by performing a first polishing process, and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing the remaining portion of the upper pre-isolation layer.