The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Oct. 11, 2012
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Tae Su Jang, Gwacheon, KR;
Assignee:
SK Hynix Inc., Icheon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8242 (2006.01); H01L 21/3205 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01);
Abstract
According to a method of manufacturing a semiconductor device including a buried gate, after a recess is formed by etching a semiconductor substrate, since an etching back process is not performed on a gate electrode material buried within the recess, variability in the depth of the gate electrode material can be reduced. In addition, GIDL can be improved by a selective oxidation process and control of a thickness of a spacer and data retention time can be increased.