The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Feb. 22, 2012
Mitsunobu Miyamoto, Osaka, JP;
Mitsunobu Miyamoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device including a semiconductor layer, a plurality of electrode portions each overlapping the semiconductor layer, and an insulating film placed between the plurality of electrode portions to lie on the semiconductor layer is fabricated. The fabrication method includes the steps of: forming an oxide semiconductor layer part of which is covered with the insulating film; forming a conductive material layer to cover the oxide semiconductor layer and the insulating film; forming the plurality of electrode portions from the conductive material layer by photolithography and plasma dry etching, to expose part of the oxide semiconductor layer from the plurality of electrode portions and the insulating film; and removing the part of the oxide semiconductor layer exposed from the plurality of electrode portions and the insulating film to form the semiconductor layer.