The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
May. 13, 2013
Sharp Laboratories of America, Inc., Camas, WA (US);
Karen Nishimura, Washougal, WA (US);
Lisa Stecker, Vancouver, WA (US);
Themistokles Afentakis, Camas, WA (US);
Kurt Ulmer, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method is provided for forming an epoxy-based planarization layer overlying an organic semiconductor (OSC) film. Generally, the method forms a fluoropolymer passivation layer overlying the OSC layer. A photopatternable adhesion layer is formed overlying the fluoropolymer passivation layer, and patterned. A photopatternable planarization layer, comprising an epoxy-based organic resin, is formed overlying the photopatternable adhesion layer and patterned to expose the fluoropolymer passivation layer. Then, the fluoropolymer passivation layer is plasma etched to expose the OSC layer. More explicitly, the method can be used to fabricate a bottom gate or top gate organic thin-film transistor (OTFT). Top gate and bottom gate OTFT devices are also provided.